IRG4PSC71KD International Rectifier, IRG4PSC71KD Datasheet - Page 2

• Manufacturer Part Number: IRG4PSC71KD
• Description: IGBT W/DIODE 600V 85A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG4PSC71KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 60A
• Current - Collector (ic) (max): 85A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Package: TO-274AA
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 85
• Ic @ 100c (a): 60
• Vce(on)@25c Typ (v): 1.83
• Vce(on)@25c Max (v): 2.30
• Ets Typ (mj): 6.28
• Ets Max (mj): 7.7
• Qrr Typ Nc 25c: 364
• Qrr Max Nc 25c: 546
• Vf Typ: 1.40
• Pd @25c (w): 350
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *IRG4PSC71KD

IRG4PSC71KD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
E
V
fe
(BR)CES
CE(on)
GE(th)
on
FM
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
31
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6900
1084 1625
1.83
2.20
1.81
3.95
2.33
6.28
-8.0
340
160
107
282
104
374
143
730
190
140
364
328
266
0.5
1.4
1.3
8.5
8.2
46
44
82
97
87
13
82
13
—
—
—
—
—
—
±100
500
510
240
423
146
120
210
546
2.3
6.0
1.7
7.7
13
66
12
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
mA
µA
nA
mJ
mJ
V
nC
nH
nC
ns
pF
V
V
S
µs
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 100A
= 60A, T
= 60A, T
= 60A, V
= 60A, V
= 60A
= 60A
= 60A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
= 250µA
= 10mA
See Fig.
See Fig.
G
G
G
= 250µA
= 1.5mA
= 60A
J
= 480V
= 480V
= 600V
= 600V, T
= 5.0
= 125°C
= 5.0
= 5.0
14
15
17
16
See Fig.8
See Fig. 11,18
See Fig. 7
www.irf.com
, V
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
J
GE
CPK
R
I
= 150°C
F
= 200V
= 60A
= 15V
< 500V