IRG4PSC71KD International Rectifier, IRG4PSC71KD Datasheet

IGBT W/DIODE 600V 85A SUPER-247

IRG4PSC71KD

Manufacturer Part Number
IRG4PSC71KD
Description
IGBT W/DIODE 600V 85A SUPER-247
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PSC71KD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 60A
Current - Collector (ic) (max)
85A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Package
TO-274AA
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
85
Ic @ 100c (a)
60
Vce(on)@25c Typ (v)
1.83
Vce(on)@25c Max (v)
2.30
Ets Typ (mj)
6.28
Ets Max (mj)
7.7
Qrr Typ Nc 25c
364
Qrr Max Nc 25c
546
Vf Typ
1.40
Pd @25c (w)
350
Environmental Options
PbF
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4PSC71KD

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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Benefits
Absolute Maximum Ratings
Thermal Resistance\ Mechanical
www.irf.com
• Hole-less clip/pressure mount package compatible
• High abort circuit rating IGBTs, optimized for
• Minimum switching losses combined with low
• Tightest parameter distribution
• IGBT co-packaged with ultrafast soft recovery
• Creepage distance increased to 5.35mm
• Highest current rating copack IGBT
• Maximum power density, twice the power
• HEXFRED
Features
R
R
R
R
V
I
I
I
I
I
I
t
V
P
P
T
T
C
C
CM
LM
F
FM
sc
STG
handling of the TO-247, less space than TO-264
IGBT, to minimize EMI, noise and switching losses
CES
GE
D
D
J
motorcontrol
with TO-247 and TO-264, with reinforced pins
conduction losses
antiparallel diode
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diode optimized for operation with
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
PRELIMINARY
G
n-ch an nel
20.0(2.0)
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PSC71KD
C
E
SUPER - 247
-55 to +150
Max.
6 (0.21)
85
± 20
600
200
200
200
350
140
Typ.
60
50
10
0.24
–––
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
V
GE
CES
PD - 91684A
= 15V, I
Max.
0.36
0.69
–––
–––
–––
38
= 600V
= 1.83V
C
= 60A
N (kgf)
Units
Units
g (oz)
°C/W
µs
°C
V
A
V
W
1
5/11/99

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IRG4PSC71KD Summary of contents

Page 1

... JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Recommended Clip Force Weight www.irf.com IRG4PSC71KD PRELIMINARY n-ch an nel SUPER - 247 -55 to +150 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ...

Page 2

... IRG4PSC71KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...

Page 3

... olle ctor-to-Em itter Vo ltag e ( Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 T = 150 Fig Typical Transfer Characteristics IRG4PSC71KD ° ° C sink riv ifie tio ° ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) ...

Page 4

... IRG4PSC71KD LIM ITED ase Tem p era ture (° Fig Maximum Collector Current vs. Case Temperature .50 0 0.05 0.0 2 0.01 SIN Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 A 1.0 -60 -40 - Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0 ctang ular Pulse D uratio n (sec) ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PSC71KD = 400V = 60A 100 200 300 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 5.0 = 15V = 480V 120 100 120 140 160 T , Junction Temperature ( C ) ° J ...

Page 6

... IRG4PSC71KD 5 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 1000 100 10 1 0.4 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 V T 100 10 1 120 ° ° °C J 0.8 1.2 1 lta 20V 125 C J SAFE OPERATING AREA ...

Page 7

... ° ° /µ Fig Typical Reverse Recovery vs ° ° 60A 120 / /µ Fig Typical Stored Charge vs. di www.irf.com ° ° 30A 20A Fig Typical Recovery Current vs ° ° 30A /dt Fig Typical di f IRG4PSC71KD /µ / 120 60A /µ /dt vs. di /dt (rec ...

Page 8

... IRG4PSC71KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - , µ S ...

Page 9

... Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current IRG4PSC71KD Test Circuit 480V @25°C C Test Circuit 9 ...

Page 10

... IRG4PSC71KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot Current limited by the package, (Die current = 100A) Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St ...

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