IRG4BC20FD International Rectifier, IRG4BC20FD Datasheet - Page 5

• Manufacturer Part Number: IRG4BC20FD
• Description: IGBT FAST 600V 16A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC20FD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 9A
• Current - Collector (ic) (max): 16A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 16A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4BC20FD

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Fig. 9 - Typical Switching Losses vs. Gate
0.90
0.88
0.86
0.84
0.82
0.80
0.78
1000
800
600
400
200
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
J
C
1
CC
GE
Collector-to-Emitter Voltage
= 480V
= 15V
= 25 C
= 9.0A
R
10
V
G
CE
°
, Gate Resistance (Ohm)

Resistance
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
20
=
=
=
=
0V,
C
C
C
ge
gc
ce

C res
C ies
C oes


+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
Ω
40
SHORTED
50
100
0.1
10
1
20
16
12
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
8
4
0

R
V
V
0

Fig. 8 - Typical Gate Charge vs.
GE
CC
V
G
I
CC
C
= 15V
= 480V
= 50Ohm
= 400V
= 9.0A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
5
Junction Temperature
J
Q , Total Gate Charge (nC)
G
Ω
0
IRG4BC20FD
10
20
40
15
60
80 100 120 140 160
20

I =

I =

I =
C
C
C
°
25
9.0 A
4.5
18
9
A
A
A
30
5