IRG4BC20FD International Rectifier, IRG4BC20FD Datasheet - Page 2

• Manufacturer Part Number: IRG4BC20FD
• Description: IGBT FAST 600V 16A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC20FD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 9A
• Current - Collector (ic) (max): 16A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 16A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4BC20FD

IRG4BC20FD
Switching Characteristics @ T
Electrical Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
fe
E
on
off
ts
ts
oes
(BR)CES
CE(on)
GE(th)
FM
g
gc
ies
res
2
rr
(rec)M
(BR)CES
GE(th)
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage —
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
2.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.72
1.66
2.06
1.76
0.25
0.64
0.89
1.35
240
150
320
290
540
124
240
210
-11
5.1
1.4
1.3
4.2
9.9
7.5
7.0
3.5
4.5
27
43
20
41
22
37
37
55
65
—
—
—
—
—
1700
±100
250
360
220
138
360
2.0
6.0
1.7
1.6
6.2
1.3
5.0
8.0
40
15
55
90
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs T
µA
nA
nC
mJ
mJ
nH
nC
V
V
V
ns
ns
pF
ns
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 9.0A
= 16A
= 9.0A, T
= 8.0A
= 8.0A, T
= 9.0A
= 25°C
= 9.0A, V
= 9.0A, V
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 15V, R
= 15V, R
= 0V, V
= ±20V
= 15V
= 0V
= 30V
= 400V
GE
GE
, I
, I
C
C
J
J
CE
CC
CC
C
C
CE
See Fig.
See Fig.
Conditions
Conditions
= 150°C
= 150°C
= 1.0mA
= 250µA
G
G
C
= 250µA
= 250µA
See Fig. 11, 18
= 600V, T
= 480V
= 50Ω
= 480V
= 50Ω
= 600V
= 9.0A
14
15
17
16
See Fig. 8
See Fig. 7
di/dt = 200A/µs
www.irf.com
See Fig. 2, 5
See Fig. 13
V
V
J
I
GE
R
F
= 150°C
= 8.0A
= 200V
= 15V