IGW60T120 Infineon Technologies, IGW60T120 Datasheet - Page 9

• Manufacturer Part Number: IGW60T120
• Description: IGBT 1200V 100A 375W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW60T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 60A
• Current - Collector (ic) (max): 100A
• Power - Max: 375W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 375W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 60.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
0V
-1
-2
-3
K/W
K/W
K/W
0us
V
I
10µs
C
CE
0.05
D=0.5
0.1
0.2
(V
Dynamic test circuit in Figure E)
(D = t
0.5us
GE
100µs
0.01
=0/15V, R
0.02
single pulse
t
p
P
/ T)
,
PULSE WIDTH
t,
1ms
TIME
1us
R
G
0.2003
0.0776
0.0469
0.0053
R , ( K / W )
1
=10Ω, T
C
1
=
10ms
τ
1
/ R
1.5us
1
j
C
= 150°C,
7.98*10
3.86*10
4.44*10
4.87*10
2
100ms
=
τ
τ
, ( s )
2
/ R
TrenchStop
R
2
-2
-3
-4
-5
2
90A
60A
30A
0A
9
Figure 22. Typical turn off behavior
90A
60A
30A
0A
®
0us
Series
V
I
C
CE
(V
Dynamic test circuit in Figure E)
0.5us
GE
=15/0V, R
t,
1us
TIME
IGW60T120
G
=10Ω, T
Rev. 2.4
1.5us
j
= 150°C,
Nov. 09
600V
400V
200V
0V