IHW40T120 Infineon Technologies, IHW40T120 Datasheet - Page 6

• Manufacturer Part Number: IHW40T120
• Description: IGBT 1200V 75A 270W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW40T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 270W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Max: 270W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 75.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100A
100A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
90A
80A
70A
60A
50A
40A
30A
20A
10A
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
0A
0V
0V
V
V
GE
CE
=17V
V
11V
15V
13V
2V
,
1V
(T
(V
9V
7V
COLLECTOR
GE
j
CE
= 25°C)
,
GATE-EMITTER VOLTAGE
=20V)
T
J
4V
2V
=150°C
25°C
-
6V
3V
EMITTER VOLTAGE
8V
4V
10V
5V
Soft Switching Series
12V
6V
6
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
100A
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
-50°C
0V
V
V
CE
GE
(T
saturation voltage as a function of
junction temperature
(V
T
=17V
,
11V
15V
13V
1V
COLLECTOR
J
j
GE
9V
,
7V
= 150°C)
JUNCTION TEMPERATURE
= 15V)
0°C
2V
-
EMITTER VOLTAGE
3V
IHW40T120
50°C
4V
Rev. 2.3 Sep 08
5V
100°C
I
I
I
I
C
C
6V
C
C
=10A
=25A
=80A
=40A