IKW50N60T Infineon Technologies, IKW50N60T Datasheet
IKW50N60T
Specifications of IKW50N60T
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IKW50N60T Summary of contents
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... V T Marking CE(sat),Tj=25°C j,max 1.5V K50T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax F I jmax IKW50N60T Series G PG-TO-247-3-21 Package PG-TO-247-3-21 Value 600 150 150 100 50 150 333 -40...+175 j -55...+175 260 Rev. 2.3 May Unit ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® TrenchStop Series Symbol Conditions Symbol Conditions . IKW50N60T q Max. Value Unit 0.45 K/W 0.8 40 Value Unit min. Typ. max. 600 - - 1.65 2.05 - 1.6 - 4.1 4.9 5.7 µ 1000 - - 100 Ω - 3140 - pF - 200 - - 310 - 458 Rev. 2.3 May 06 ...
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... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW50N60T q Value Unit min. Typ. max 299 - - 143 - ns - 1.8 - µ 671 - A/ s Value Unit min. Typ. max 341 - - 205 - ns - 4.3 - µ ...
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... C) j Power Semiconductors ® TrenchStop 100A 10A 1A 100kH z 1V Figure 2. Safe operating area = 400V 80A 60A 40A 20A 0A 25°C Figure 4. Collector current as a function of 4 IKW50N60T Series t 10µs 50µs 1ms DC 10ms 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 ...
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... Power Semiconductors ® TrenchStop Series 120A V 100A 80A 60A 40A 20A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IKW50N60T =20V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 50°C 100° JUNCTION TEMPERATURE J ...
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... A Figure 10. Typical switching times 7Ω (off in d(on -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =7Ω IKW50N60T t d(off d( GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 50A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100°C 150° ...
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... J E off .0m J 60A 80A Figure 14. Typical switching energy losses = 175°C, = 7Ω 300V Figure 16. Typical switching energy losses = 400V, = 7Ω IKW50N60T Series *) clu rec off GATE RESISTOR function of gate resistor (inductive load 175° 400V 0/15V 50A Dynamic test circuit in Figure E) ...
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... V 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 18V V GE Figure 20. Short circuit withstand time as a function of gate-emitter voltage ( V T Jmax 8 IKW50N60T C C 10V 20V 30V 40V - EMITTER VOLTAGE =0V MHz) GE 11V 12V 13V 14V , - GATE EMITETR VOLTAGE =600V , start 25° ...
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... J 3.5µC 3.0µC 2.5µC 2.0µC T =25°C 1.5µC J 1.0µC 0.5µC 0.0µC 700A/µs Figure 24. Typical reverse recovery charge 9 IKW50N60T Series D =0.5 0.2 0 0.2441 7.037*10 0.05 0.2007 7.312*10 0.1673 6.431*10 0.1879 4.79*10 0.02 ...
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... V R Dynamic test circuit in Figure E) 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 28. Typical diode forward voltage as a function of junction temperature 10 IKW50N60T T =25° =175°C J 800A/µs 900A/µs 1000A/µs DIODE CURRENT SLOPE =400V, I =50A =100A F ...
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... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 11 IKW50N60T q Rev. 2.3 May 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 12 IKW50N60T Rev. 2.3 May 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 13 IKW50N60T q Rev. 2.3 May 06 ...