SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 5

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
80A
70A
60A
50A
40A
30A
20A
10A
Figure 7. Typical transfer characteristics
(V
80A
70A
60A
50A
40A
30A
20A
10A
0A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
T
CE
4V
j
=-40°C
1V
V
T
V
,
j
GE
COLLECTOR
G E
T
=+25°C
j
=+150°C
,
=17V
5V
15V
13V
11V
GATE
9V
7V
2V
6V
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
8V
5V
9V
6V
10V 11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
80A
70A
60A
50A
40A
30A
20A
10A
Figure 6. Typical output characteristics
(T
0A
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
V
,
T
G E
COLLECTOR
j
,
JUNCTION TEMPERATURE
=17V
0°C
15V
13V
11V
9V
7V
2V
SKW25N120
3V
-
50°C
EMITTER VOLTAGE
4V
100°C
Rev. 2_1
5V
I
C
=12.5A
I
I
C
6V
C
150°C
=25A
=50A
Apr 06
7V