IHW30N120R2 Infineon Technologies, IHW30N120R2 Datasheet
IHW30N120R2
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IHW30N120R2 Summary of contents
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... Soft Switching Series CE(sat) http://www.infineon.com/igbt CE(sat),Tj=25°C j,max 1.65V 175°C Symbol jmax ≤ 175° jmax limited jmax IHW30N120R2 PG-TO-247-3 Marking Package H30R1202 PG-TO-247-3 Value Unit 1200 130 120 ±20 V ±25 390 W °C -40...+175 -55...+175 260 Rev. 1.5 Dec. 09 ...
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... 25° 5° 5° 7mA 1200V 25° 5° 20V 30A IHW30N120R2 Max. Value Unit 0.38 K/W 0.37 40 Value Unit min. Typ. max. 1200 - - V - 1.65 1 1.55 1 1.75 - 5.1 5.8 6.4 µ 2500 - - 100 none Ω Rev. 1.5 Dec. 09 ...
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... 8Ω 180nH σ 39pF C σ =175 °C j Symbol Conditions = 17 5° 00V 30A 28Ω σ 9pF C σ due to dynamic test circuit in Figure E. σ 3 IHW30N120R2 - 2589 - 198 - Value Unit min. typ. Max. - 792 - 2 2 Value Unit min. Typ. Max. - 860 - 3 3.1 ...
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... CE 50A 40A 30A 20A 10A 0A 125°C 150°C 25°C 50° Figure 4. DC Collector current as a function of case temperature ( IHW30N120R2 =1µ 10µs 20µs 50µs 500µs 5ms DC 10V 100V 1000V - EMITTER VOLTAGE = 25°C, C =15V) GE 75°C 100°C 125°C 150°C ...
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... CE Figure 6. Typical output characteristic (T = 175°C) j 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 8V 10V , T JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature ( IHW30N120R2 =20V V GE 15V 13V 11V EMITTER VOLTAGE =60A I C =30A I C =15A I C 50°C 100°C 150° ...
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... Dynamic test circuit in Figure E) t d(off 125°C 150°C -50° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.7mA) C =28Ω IHW30N120R2 t d(off) 30Ω 40Ω 50Ω 60Ω 70Ω GATE RESISTOR G =175°C, V =600V =0/15V, I =30A, C max. typ. min. 0°C 50°C 100° ...
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... Dynamic test circuit in Figure E) 4mJ 3mJ 2mJ mJ 0mJ 400V 500V , V COLLECTOR CE Figure 16. Typical turn-off energy as a function of collector emitter voltage =28Ω, (inductive load Dynamic test circuit in Figure E) 7 IHW30N120R2 E off 30Ω 40Ω 50Ω 60Ω 70Ω GATE RESISTOR G =175°C, V =600V =0/15V, I =30A off 600V ...
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... K/W τ single pulse 10µs 100ms Figure 20. Diode transient thermal impedance as a function of pulse width (D=t / IHW30N120R2 C iss C oss C rss 10V 20V - EMITTER VOLTAGE =0V MHz) τ 0.1476 8.51*10 -3 0.1128 8.37*10 -4 0.0885 7.14*10 0.05 -5 0.0233 5.96*10 0.02 R ...
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... V FORWARD VOLTAGE F Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors IHW30N120R2 Soft Switching Series 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 50°C 2. JUNCTION TEMPERATURE J Figure 22. Typical diode forward voltage as a function of junction temperature ...
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... Power Semiconductors IHW30N120R2 Soft Switching Series PG-TO247-3 10 Rev. 1.5 Dec. 09 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IHW30N120R2 Soft Switching Series i Figure C. Definition of diodes switching characteristics τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L capacity τ τ and Stray σ σ Rev. 1.5 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IHW30N120R2 Soft Switching Series 12 Rev. 1.5 ...