IHW30N100R Infineon Technologies, IHW30N100R Datasheet
IHW30N100R
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IHW30N100R Summary of contents
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... J-STD-020 and JESD-022 Power Semiconductors Soft Switching Series CE(sat) 1 for target applications V T Marking CE(sat),Tj=25°C j,max 1.5V H30R100 175 C Symbol jmax 1200V, T 150 jmax < IHW30N100R PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1000 412 W -40...+175 C -55...+175 C 260 Rev. 2 July 06 ...
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... Power Semiconductors Soft Switching Series Symbol Conditions Symbol Conditions IHW30N100R q Max. Value Unit 0.36 K/W 0.36 40 Value Unit min. Typ. max. 1000 - - V - 1.5 1 1.5 1 1.7 - 5.1 5.8 6 2500 - - 600 2791 - 209 - Rev. 2 July 06 ...
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... IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Power Semiconductors Soft Switching Series = Symbol Conditions =175 C j Symbol Conditions IHW30N100R q Value Unit min. Typ. max. - 846 - - 33 2 Value Unit min. Typ. max. - 948 - - 40 2. Rev. 2 July 06 ...
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... Power Semiconductors Soft Switching Series 10A 1A 0.1A 100kHz 1V Figure 2. Safe operating area = 400V 50A 40A 30A 20A 10A 0A 125°C 150°C 25°C Figure 4. Collector current as a function of 4 IHW30N100R DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 =15V) GE 75°C 125°C T ...
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... Figure 6. Typical output characteristic (T 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 8V 10V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V 5 IHW30N100R 15V 13V 11V COLLECTOR EMITTER VOLTAGE = 175° =60A C I =30A C I =15A C 0°C 50°C 100° ...
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... Figure 10. Typical switching times as a =26Ω 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as = 600V, =26Ω IHW30N100R t d(off GATE RESISTOR G function of gate resistor (inductive load 175° 600V 0/15V 30A Dynamic test circuit in Figure E) max. ...
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... Figure 14. Typical switching energy losses = 175°C, =26Ω, G 3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 400V Figure 16. Typical switching energy losses = 600V, = 26Ω IHW30N100R GATE RESISTOR function of gate resistor (inductive load 175° 600V 0/15V 30A Dynamic test circuit in Figure E) ...
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... Figure 18. Typical capacitance as a function - 7.03*10 -3 6.76*10 -4 6.53*10 -5 8.22* K 10ms 100ms Figure 20. Diode transient thermal 8 IHW30N100R 10V 20V 30V 40V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE D=0.5 0 0.1 0.1586 7.03*10 0.0987 6.76*10 0.0807 6.53*10 0.05 0.026 8.22*10 R 0.02 1 0.01 C ...
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... Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors Soft Switching Series 2.0V 1.5V 1.0V 0.5V 0.0V 1.5V -50°C 0° JUNCTION TEMPERATURE J Figure 22. Typical diode forward voltage as a function of junction temperature 9 IHW30N100R q I =60A F 30A 15A 50°C 100°C 150°C Rev. 2 July 06 ...
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... PG-TO247-3-21 Power Semiconductors Soft Switching Series 10 IHW30N100R q Rev. 2 July 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 11 IHW30N100R Rev. 2 July 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 12 IHW30N100R q Rev. 2 July 06 ...