IGW25T120 Infineon Technologies, IGW25T120 Datasheet - Page 8

• Manufacturer Part Number: IGW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
15V
10V
15µs
10µs
Figure 17. Typical gate charge
Figure 19. Short circuit withstand time as a
5V
0V
5µs
0µs
0nC
12V
V
(I
function of gate-emitter voltage
(V
GE
50nC
C
CE
=25 A)
,
GATE
Q
=600V, start at T
240V
GE
,
-
GATE CHARGE
100nC
EMITTETR VOLTAGE
14V
960V
150nC
J
=25°C)
200nC
16V
TrenchStop
8
Figure 18. Typical capacitance as a function
Figure 20. Typical short circuit collector
®
100pF
200A
150A
100A
10pF
50A
Series
1nF
0A
12V
0V
V
CE
V
of collector-emitter voltage
(V
current as a function of gate-
emitter voltage
(V
,
GE
COLLECTOR
GE
CE
,
GATE
=0V, f = 1 MHz)
≤ 600V, T
14V
-
10V
EMITTETR VOLTAGE
-
EMITTER VOLTAGE
IGW25T120
j
≤ 150°C)
16V
Rev. 2.4
20V
18V
Nov. 09
C
C
C
oss
iss
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