IHW20T120 Infineon Technologies, IHW20T120 Datasheet - Page 10

• Manufacturer Part Number: IHW20T120
• Description: IGBT 1200V 40A 178W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 178W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 178W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
Figure 23. IGBT transient thermal
resistance
(D = t
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
-1
-2
0
500ns
400ns
300ns
200ns
100ns
R
K/W
K/W
K/W
=600V, I
0ns
10µs
p
200A/µs
/ T)
D=0.5
di
0.1
0.2
F
/dt,
F
=8A,
100µs
single pulse
0.01
t
DIODE CURRENT SLOPE
0.02
P
400A/µs
,
PULSE WIDTH
0.05
1ms
R
0.3841
0.2088
0.1079
R , ( K / W )
1
600A/µs
C
1
=
10ms
1
/R
1
C
T
800A/µs
6.54*10
3.12*10
2.26*10
2
100m s
J
T
=
=150°C
J
, ( s )
=25°C
2
Soft Switching Series
/R
R
2
-2
-3
-4
2
10
10
10
2µC
1µC
0µC
Figure 24. Typical Diode transient thermal
impedance as a function of pulse width
(D=t
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
-1
0
R
K/W
K/W
200A/µs
=600V, I
P
/T)
10µs
D=0.5
0.2
0.1
di
F
/dt,
F
single pulse
=8A,
0.01
100µs
400A/µs
t
DIODE CURRENT SLOPE
0.02
P
0.05
,
PULSE WIDTH
1ms
IHW20T120
600A/µs
R
0.2440
0.4622
0.4972
0.0946
R , ( K / W )
1
C
1
=
10ms
1
/R
Rev. 2.2 May 06
1
800A/µs
T
C
J
T
5.53*10
7.07*10
8.85*10
8.48*10
2
=150°C
=
100m s
J
=25°C
, ( s )
2
/R
R
2
-2
-3
-4
-5
2