IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 5

• Manufacturer Part Number: IHW25N120R2
• Description: IGBT 1200V 50A 365W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IHW25N120R2

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 365W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 365W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
70A
60A
50A
40A
30A
20A
10A
70A
60A
50A
40A
30A
20A
10A
0A
0A
0V
0V
V
CE
V
(T
(V
,
2V
GE
COLLECTOR
j
CE
= 25°C)
,
=20V)
GATE-EMITTER VOLTAGE
V
T
GE
J
=175°C
=20V
1V
4V
11V
15V
13V
9V
7V
25°C
-
EMITTER VOLTAGE
6V
2V
8V
Soft Switching Series
10V
5
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter saturation
70A
60A
50A
40A
30A
20A
10A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0A
0V
V
CE
(T
voltage as a function of junction
temperature
(V
,
0°C
T
COLLECTOR
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
=15V)
1V
IHW25N120R2
V
GE
=20V
50°C
11V
15V
13V
9V
7V
-
EMITTER VOLTAGE
2V
Rev. 2.3
100°C
3V
I
I
I
C
C
C
150°C
=12.5A
Nov. 09
=25A
=50A