IHW15T120 Infineon Technologies, IHW15T120 Datasheet - Page 11

• Manufacturer Part Number: IHW15T120
• Description: IGBT 1200V 30A 113W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW15T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 113W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 113W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
Figure 23. Typical IGBT transient thermal
resistance
(D = t
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
-1
-2
0
500ns
400ns
300ns
200ns
100ns
R
K/W
K/W
K/W
=600V, I
0ns
10µs
p
200A/µs
/ T)
D=0.5
0.05
di
0.2
0.1
F
/dt,
F
=8A,
100µs
t
DIODE CURRENT SLOPE
0.02
0.01
single pulse
P
400A/µs
,
PULSE WIDTH
1ms
R
0.121
0.372
0.381
0.226
R , ( K / W )
1
600A/µs
C
1
=
10ms
1
/ R
1
C
T
800A/µs
1.73*10
2.75*10
2.57*10
2.71*10
2
100ms
J
T
=
=150°C
J
, ( s )
=25°C
2
Soft Switching Series
/ R
R
2
-1
-2
-3
-4
2
11
0
0
0
-1
-2
2µC
1µC
0µC
0
Figure 24. Typical Diode transient thermal
impedance as a function of pulse width
(D=t
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
K/W
K/W
K/W
R
200A/µs
=600V, I
10µs
P
/T)
D=0.5
0.1
0.2
di
single pulse
F
/dt,
100µs
F
0.01
=8A,
400A/µs
0.02
t
DIODE CURRENT SLOPE
0.05
P
,
PULSE WIDTH
1ms
R
IHW15T120
0.3069
0.5654
0.4218
0.00818
R , ( K / W )
600A/µs
1
C
1
=
1
10ms
/ R
1
Rev. 2.3 Sep 08
C
800A/µs
4.097*10
4.430*10
3.764*10
3.021*10
T
2
=
J
T
100ms
=150°C
, ( s )
J
2
=25°C
/ R
R
2
2
-2
-3
-4
-5