IGW15T120 Infineon Technologies, IGW15T120 Datasheet - Page 2

• Manufacturer Part Number: IGW15T120
• Description: IGBT 1200V 30A 110W YO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW15T120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IGW15T120XK

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
j
= 25 °C, unless otherwise specified
Symbol
R
R
V
V
V
I
I
g
R
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
G i n t
i s s
o s s
r s s
G a t e
TrenchStop
2
V
V
T
T
T
I
V
V
T
T
V
V
V
V
f= 1 M Hz
V
V
V
V
T
C
j
j
j
j
j
j
G E
G E
C E
G E
C E
C E
C E
G E
C C
G E
G E
C C
= 25° C
= 12 5° C
= 15 0° C
= 0. 6mA, V
= 25° C
= 15 0° C
= 25° C
= 1200V
= 0V ,V
= 20V, I
= 25V,
= 0V, I
= 0V
= 0V,
= 9 60V, I
= 1 5V
= 1 5V,t
= 600V,
= 15V, I
Conditions
Conditions
®
Series
C
G E
S C
= 0. 5mA
C
,
C E
= 2 0V
= 15A
C
C
≤10µs
= 15A
= 15A
= V
G E
1200
min.
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW15T120
Max. Value
Value
none
1100
typ.
100
1.1
1.7
2.0
2.2
5.8
40
10
50
85
13
90
-
-
-
-
Rev. 2.5
max.
100
2.2
6.5
0.2
2.0
-
-
-
-
-
-
-
-
-
-
Nov. 09
Unit
K/W
Unit
V
mA
nA
S
Ω
pF
nC
nH
A