IKW08T120 Infineon Technologies, IKW08T120 Datasheet - Page 12

• Manufacturer Part Number: IKW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 70W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
25A
20A
15A
10A
Figure 23. Typical reverse recovery time as
Figure 25. Typical reverse recovery current
5A
0A
500ns
400ns
300ns
200ns
100ns
200A/µs
0ns
200A/µs
di
di
a function of diode current slope
(V
Dynamic test circuit in Figure E)
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
/dt,
R
R
=600V, I
=600V, I
400A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
400A/µs
F
F
=8A,
=8A,
600A/µs
600A/µs
T
800A/µs
T
T
800A/µs
J
=150°C
J
J
T
=25°C
=150°C
J
=25°C
TrenchStop
12
Figure 24. Typical reverse recovery charge
Figure 26. Typical diode peak rate of fall of
2µC
1µC
0µC
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
®
-0A/µs
Series
200A/µs
200A/µs
di
di
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
/dt,
R
R
=600V, I
=600V, I
400A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
400A/µs
F
F
=8A,
=8A,
IKW08T120
600A/µs
600A/µs
Rev. 2.2 Dec 07
T
800A/µs
T
J
J
T
=25°C
=150°C
800A/µs
T
J
=25°C
J
=150°C