SGP15N120 Infineon Technologies, SGP15N120 Datasheet
SGP15N120
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SGP15N120 Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors SGP15N120 P-TO-220-3-1 (TO-220AB) http://www.infineon.com/igbt Package C off j 1.5mJ TO-220AB 150 C TO-263AB(D2PAK) TO-247AC Symbol jmax 150 SGP15N120 SGW15N120 P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) Ordering Code Q67040-S4274 Q67040-S4275 Q67040-S4276 Value 1200 198 -55...+150 260 Unit ...
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... TO-247AC R TO-263AB(D2PAK Symbol Conditions =1200V,V = =0V,V =20V TO-247AC (one layer thick) copper area for 2 SGP15N120 SGW15N120 Max. Value Unit 0.63 K Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 200 - - 800 - - 100 1250 1500 pF - 100 120 - 130 175 145 - A Jul-02 ...
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... reverse recovery. =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery. 3 SGP15N120 SGW15N120 Value Unit min. typ. max 580 750 - 1.1 1 0.8 1.1 - 1.9 2.6 Value Unit min. typ. max 652 780 - ...
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... Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 100°C 125°C 25°C Figure 4. Collector current as a function of case temperature ( SGP15N120 SGW15N120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP15N120 SGW15N120 =17V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE I =30A C I =15A C I =7.5A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SGP15N120 SGW15N120 t d(off) t d(on GATE RESISTOR G = 150 +15V/0V 15A max. min. 0°C 50°C 100° ...
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... Fig K K/W E off -3 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SGP15N120 SGW15N120 *) E and E include losses on ts due to diode recovery GATE RESISTOR G = 150 +15V/0V 15A D=0.5 0.2 0.1 0. 0.02 0.09751 ...
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... GE 300A 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V SGP15N120 SGW15N120 C iss C oss C rss 10V 20V 30V - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V 20V , - ...
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... TO-220AB 2 TO-263AB (D Power Semiconductors SGP15N120 Pak) 9 SGP15N120 SGW15N120 dimensions symbol [mm] [inch] min max min A 9.70 10.30 0.3819 B 14.88 15.95 0.5858 C 0.65 0.86 0.0256 D 3.55 3.89 0.1398 E 2.60 3.00 0.1024 F 6.00 6.80 0.2362 G 13.00 14.00 0.5118 H 4.35 4.75 0.1713 K 0.38 0.65 0.0150 L 0 ...
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... TO-247AC Power Semiconductors SGP15N120 symbol 20.80 K 15. 19.81 N 3.560 SGP15N120 SGW15N120 dimensions [mm] [inch] min max min max 4.78 5.28 0.1882 0.2079 2.29 2.51 0.0902 0.0988 1.78 2.29 0.0701 0.0902 1.09 1.32 0.0429 0.0520 1.73 2.06 0.0681 0.0811 2.67 3.18 0.1051 0.1252 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGP15N120 i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF. 11 SGP15N120 SGW15N120 Jul-02 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGP15N120 12 SGP15N120 SGW15N120 Jul-02 ...