SGB15N120 Infineon Technologies, SGB15N120 Datasheet
SGB15N120
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SGB15N120 Summary of contents
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... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors for target applications http://www.infineon.com/igbt Marking C off j 1.5mJ GB15N120 150 C Symbol jmax 150 SGB15N120 G PG-TO-263-3-2 (D²-PAK) Package PG-TO-263-3-2 Value 1200 198 -55...+150 245 Rev. 2_2 C E Unit ...
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... Conditions Symbol Conditions =1200V,V = =0V,V =20V (one layer thick) copper area for 2 SGB15N120 Max. Value Unit 0.63 K/W 40 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 200 - - 800 - - 100 1250 1500 pF - 100 120 - 130 175 145 - A Rev. 2_2 Apr 07 ...
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... Energy losses include “tail” and diode reverse recovery. =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery. 3 SGB15N120 Value Unit min. typ. max 580 750 - 1.1 1 0.8 1.1 - 1.9 2.6 Value Unit min. typ. max 652 780 - 1.9 2 ...
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... Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 100°C 125°C 25°C Figure 4. Collector current as a function of case temperature ( SGB15N120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB15N120 =17V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE I =30A C I =15A C I =7.5A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE j Rev ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SGB15N120 t d(off) t d(on GATE RESISTOR G = 150 +15V/0V 15A max. min. 0°C 50°C 100°C 150° ...
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... Fig K K/W E off -3 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SGB15N120 *) E and E include losses on ts due to diode recovery GATE RESISTOR G = 150 +15V/0V 15A D=0.5 0.2 0.1 0. 0.02 0.09751 0.67774 ...
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... GE 300A 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V SGB15N120 C iss C oss C rss 10V 20V 30V - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V 20V , - GATE ...
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... Power Semiconductors PG-TO263-3-2 9 SGB15N120 Rev. 2_2 Apr 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGB15N120 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF Rev. 2_2 Apr 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGB15N120 11 Rev. 2_2 Apr 07 ...