SGI02N120 Infineon Technologies, SGI02N120 Datasheet

SGI02N120

Manufacturer Part Number

SGI02N120

Description

IGBT NPT 1200V 6.2A 62W TO262-3

Manufacturer

Infineon Technologies

Datasheet

1.SGI02N120.pdf (13 pages)

Specifications of SGI02N120

Package / Case

TO-262-3 (Straight Leads)

Igbt Type

NPT

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

3.6V @ 15V, 2A

Current - Collector (ic) (max)

6.2A

Power - Max

62W

Input Type

Standard

Mounting Type

Through Hole

Configuration

Single

Collector- Emitter Voltage Vceo Max

1200 V

Maximum Gate Emitter Voltage

+/- 20 V

Maximum Operating Temperature

+ 150 C

Continuous Collector Current Ic Max

6.2 A

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Switching Frequency

Fast IGBT 10-40 kHz

Package

D2PAK (TO-263)

Vce (max)

1,200.0 V

Ic(max) @ 25°

6.2 A

Ic(max) @ 100°

2.8 A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SGI02N120XK

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Fast S-IGBT in NPT-technology

Type

SGP02N120

SGB02N120

SGD02N120

SGI02N120

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

Pulsed collector current, t

Turn off safe operating area

Gate-emitter voltage

Avalanche energy, single pulse

Short circuit withstand time

Power dissipation

Operating junction and storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Power Semiconductors

40% lower E

Short circuit withstand time – 10 s

Designed for:

NPT-Technology offers:

Allowed number of short circuits: <1000; time between short circuits: >1s.

= 2A, V

= 25 C

= 100 C

= 25 C

= 15V, 100V

1200V, T

- Motor controls

- Inverter

- SMPS

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

= 50V, R

off

compared to previous generation

150 C

1200V

= 25 , start at T

1200V, T

limited by T

150 C

jmax

0.11mJ

= 25 C

off

SGB02N120, SGD02N120

Preliminary

150 C

Package

TO-220AB

TO-263AB(D2PAK)

TO-252AA(DPAK)

TO-262

Symbol

C p u l s

S C

C E

G E

A S

t o t

, T

s t g

SGP02N120

-55...+150

Ordering Code

Q67040-S4270

Q67040-S4271

Q67040-S4269

Q67040-S4291

Value

1200

260

6.2

2.8

9.6

Unit

Mar-00

Related parts for SGI02N120

SGI02N120 Summary of contents

Page 1

... Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Type SGP02N120 1200V 2A SGB02N120 SGD02N120 SGI02N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current 100 C C Pulsed collector current, t limited Turn off safe operating area V ...

Page 2

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) SMD version, device on PCB Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...

Page 3

Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time ...

Page 4

T =80° =110° 10Hz 100Hz 1kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 150 0. 800V, ...

Page 5

V =17V GE 15V 13V 4A 11V COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( ...

Page 6

I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load 150 +15V/0V, ...

Page 7

E and E include losses on ts due to diode recovery. 1.5mJ 1.0mJ 0.5mJ 0.0mJ COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector current (inductive load, T ...

Page 8

Q , GATE CHARGE GE Figure 17. Typical gate charge ( 10V 11V 12V 13V V ...

Page 9

TO-220AB 2 TO-263AB (D Power Semiconductors Preliminary SGB02N120, SGD02N120 Pak) 9 SGP02N120 dimensions symbol [mm] [inch] min max min A 9.70 10.30 0.3819 B 14.88 15.95 0.5858 C 0.65 0.86 0.0256 D 3.55 3.89 0.1398 E 2.60 3.00 0.1024 F ...

Page 10

TO-252AA (DPak) Power Semiconductors Preliminary SGB02N120, SGD02N120 symbol min A 6.40 B 5.25 C (0.65 2.19 G 0.76 H 0.90 K 5.97 L 9.40 M 0.46 N 0.87 P 0.51 R 5.00 S 4.17 T 0.26 ...

Page 11

Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Preliminary SGB02N120, SGD02N120 i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. ...

Page 12

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

Page 13

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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