IGW03N120H2 Infineon Technologies, IGW03N120H2 Datasheet - Page 9

• Manufacturer Part Number: IGW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IGW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 9.6A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 62.5W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
800V
600V
400V
200V
0V
Figure 21. Typical turn off behavior, soft
switching
(V
Dynamic test circuit in Figure E)
GE
0.0
=15/0V, R
0.4
0.8
t
p
,
G
PULSE WIDTH
1.2
=82Ω, T
1.6
2.0
j
= 150 C,
2.4
2.8
3A
2A
1A
0A
9
IGW03N120H2
IGP03N120H2
Rev. 2.5 Sept. 07