IKB03N120H2 Infineon Technologies, IKB03N120H2 Datasheet - Page 3

• Manufacturer Part Number: IKB03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKB03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-220-3 (Straight Leads)
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
2)
4)
Power Semiconductors
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
b
b
t
t
t
t
E
E
E
t
Q
I
d i
d i
t
t
t
t
E
E
E
t
Q
I
d i
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
F
r r
F
r r
/ d t
/ d t
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
G
G
=2 5 C ,
=2 5 C ,
=1 5 0 C
= 3 A,
=1 5 0 C
2 )
2 )
2 )
= 8 00 V , I
2 )
= 8 00 V , I
= 82 ,
= 82
= 82 ,
= 82
3
= 80 0 V, I
= 15 V /0 V ,
= 80 0 V,
= 15 V /0 V ,
=1 8 0n H,
=1 8 0n H,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
= 3 A,
= 3 A,
= 3 A,
4)
3)
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKB03N120H2
Value
Value
1180
0.14
0.15
0.29
0.23
10.3
0.22
0.26
0.48
0.51
typ.
typ.
281
993
340
125
829
540
9.2
5.2
9.4
6.7
29
42
63
12
Rev. 2.3
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
May 06
Unit
ns
mJ
ns
µC
A
A/ s
Unit
ns
mJ
ns
µC
A
A/ s