IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 8

• Manufacturer Part Number: IKP01N120H2
• Description: IGBT 1200V 3.2A 28W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP01N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3.2A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 28W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
0.25mJ
0.20mJ
0.15mJ
0.10mJ
0.05mJ
0.00mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
= 800V, V
= +15V/0V, I
0A
1
due to diode recovery.
T
E
) E
1
due to diode recovery.
-40°C
) E
off
j
I
,
C
on
JUNCTION TEMPERATURE
,
on
and E
COLLECTOR CURRENT
GE
and E
C
= +15V/0V, R
j
1A
CE
= 150 C,
= 1A, R
ts
ts
= 800V,
include losses
25°C
include losses
G
2A
= 241 ,
100°C
G
= 241 ,
150°C
3A
E
E
E
E
off
E
on
ts
on
ts
1
1
1
1
8
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
CE
0.06mJ
0.04mJ
0.02mJ
0.00mJ
0.25mJ
0.20mJ
0.15mJ
0.10mJ
0.05mJ
= 800V, V
0V/us
50
1
due to diode recovery.
dv/dt, VOLTAGE SLOPE
) E
I
C
on
R
=0.3A, T
E
GE
off
and E
G
1000V/us
100
,
= +15V/0V, I
j
I
GATE RESISTOR
C
= 150 C,
=0.3A, T
J
ts
=150°C
I
C
include losses
=1A, T
IKP01N120H2
J
=25°C
150
J
=150°C
2000V/us
C
Rev. 2.4
I
C
=1A, T
= 1A,
200
J
=25°C
3000V/us
E
E
ts
Sept. 07
1
on
1