IGP03N120H2 Infineon Technologies, IGP03N120H2 Datasheet - Page 12

• Manufacturer Part Number: IGP03N120H2
• Description: IGBT 1200V 9.36A 62.5W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IGP03N120H2

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 9.6 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
IGP03N120H2,
IGW03N120H2
12
i,v
p(t)
V
DC
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L = 180nH,
Stray capacitor C = 40pF,
Relief capacitor C
ZVT switching)
r
1
di /dt
1
r
F
I
1
r r m
(Diode)
R
DUT
½ L
G
öö
½ L
IGB03N120H2
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r
r r
r r
= 4nF (only for
t
r r
S
Q
S
+
(IGBT)
90% I
F
DUT
t
+
Rev. 2, Mar-04
L
F
Q
t
F
F
r r m
r
di
C
10% I
n
n
r r
r
n
/dt
r r m
C
r
V
T
t
R
C