IKB15N60T Infineon Technologies, IKB15N60T Datasheet
IKB15N60T
Specifications of IKB15N60T
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IKB15N60T Summary of contents
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... CE(sat) 1 for target applications http://www.infineon.com/igbt/ T Marking Code CE(sat),Tj=25°C j,max 1.5V K15T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax F I jmax IKB15N60T Series G PG-TO263-3-2 Package PG-TO263-3-2 Value 600 130 -40...+175 j -55...+175 245 Rev. 2.5 Oct Unit ...
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... TrenchStop Series Symbol Conditions 6cm² Symbol Conditions . 0µ 150 IKB15N60T q Max. Value Unit 1.15 K/W 1.9 40 Value Unit min. Typ. max. 600 - - V - 1.5 2. 1.65 2.05 - 1.6 - 4.1 4.9 5.7 µ 1000 - - 100 Ω - 860 - 137 Rev. 2.5 Oct. 07 ...
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... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKB15N60T q Value Unit min. Typ. max 188 - - 0.24 - µ 718 - A/ s Value Unit min. Typ. max 212 - - 140 - ns - 1.0 - µ ...
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... C) j Power Semiconductors ® TrenchStop 10A 1A 0.1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 30A 20A 10A 0A 25°C Figure 4. Collector current as a function of 4 IKB15N60T Series t =2µs p 10µs 50µs 1ms DC 10ms 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C; ...
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... TrenchStop Series 40A 35A V GE 30A 25A 20A 15A 10A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IKB15N60T =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE ( T = 175° 50°C 100°C 150° JUNCTION TEMPERATURE ...
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... Figure 10. Typical switching times 15Ω d(off in -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =15Ω IKB15N60T d(on GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 15A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100° ...
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... A Figure 14. Typical switching energy losses = 175°C, = 15Ω, G 1.2m J 1.0m J 0.8m J 0.6m J 0.4m J 0.2m J 0.0m J 300V Figure 16. Typical switching energy losses = 400V, = 15Ω IKB15N60T Series *) E and E include losses on ts due to diode recovery E off GATE RESISTOR function of gate resistor (inductive load 175° ...
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... V GE 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 18V V GE Figure 20. Short circuit withstand time as a function of gate-emitter voltage ( Jmax 8 IKB15N60T 20V 30V 40V 50V - EMITTER VOLTAGE =0V MHz) 12V 13V 14V , - GATE EMITETR VOLTAGE =600V , start 25°C, J <150°C) Rev ...
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... Figure 22. Diode transient thermal 1.0µC T =175°C J 0.8µC 0.6µC T =25°C 0.4µC J 0.2µC 0.0µC 400A/µs 800A/µs Figure 24. Typical reverse recovery charge 9 IKB15N60T Series D =0.5 0 0.06991 1.11*10 0.1 0.43036 2.552*10 0.53839 3.914*10 0.05 0.58718 4.92*10 0.23695 7 ...
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... Figure 26. Typical diode peak rate of fall of 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 2V Figure 28. Typical diode forward voltage IKB15N60T T =175° 400A/µs 600A/µs 800A/µs di /dt , DIODE CURRENT SLOPE F reverse recovery current as a function of diode current slope ...
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... Power Semiconductors ® TrenchStop Series PG-TO263-3-2 11 IKB15N60T q Rev. 2.5 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 12 IKB15N60T =60nH =40pF. Rev. 2.5 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 13 IKB15N60T q Rev. 2.5 Oct. 07 ...