IKB10N60T Infineon Technologies, IKB10N60T Datasheet - Page 9

• Manufacturer Part Number: IKB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 21. IGBT transient thermal resistance
Figure 23. Typical reverse recovery time as
10
10
10
300ns
250ns
200ns
150ns
100ns
50ns
-1
-2
0
0ns
K/W
K/W
K/W
200A/µs
10µs
D =0.5
di
0.1
0.2
( D = t
a function of diode current slope
( V
Dynamic test circuit in Figure E)
F
/dt ,
R
single pulse
0.01
=400V, I
0.02
100µs
0.05
400A/µs
t
p
DIODE CURRENT SLOPE
P
,
/ T )
PULSE WIDTH
F
=10A,
1ms
R
0.2911
0.4092
0.5008
0.1529
600A/µs
R , ( K / W )
1
C
1
=
1
10ms
/R
1
C
T
800A/µs
6.53*10
8.33*10
7.37*10
7.63*10
2
T
J
=
=175°C
100ms
J
, ( s )
2
=25°C
/R
R
2
-2
-3
-4
-5
2
9
TrenchStop
Figure 22. Diode transient thermal
Figure 24. Typical reverse recovery charge
10
10
10
0,8µC
0,7µC
0,6µC
0,5µC
0,4µC
0,3µC
0,2µC
0,1µC
0,0µC
-1
-2
0
K/W
K/W
K/W
200A/µs
®
1µs
D =0.5
Series
di
impedance as a function of pulse
width
( D = t
as a function of diode current
slope
( V
Dynamic test circuit in Figure E)
0.1
0.2
F
/dt ,
R
10µs 100µs 1ms
= 400V, I
P
/ T )
t
DIODE CURRENT SLOPE
400A/µs
0.01
single pulse
P
0.02
,
0.05
PULSE WIDTH
F
= 10A,
IKB10N60T
R
0.3169
0.4734
0.6662
0.4398
R , ( K / W )
600A/µs
1
C
1
=
1
Rev. 2.3 Oct. 07
/R
10ms 100ms
1
T
C
800A/µs
4.629*10
7.07*10
1.068*10
1.253*10
2
J
T
=
=175°C
J
, ( s )
=25°C
2
/R
R
2
-3
2
-2
-3
-4
p
6