SGD02N120 Infineon Technologies, SGD02N120 Datasheet - Page 9
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SGD02N120
Manufacturer Part Number
SGD02N120
Description
IGBT NPT 1200V 6.2A 62W TO252-3
Manufacturer
Infineon Technologies
Datasheet
1.SGD02N120.pdf
(13 pages)
Specifications of SGD02N120
Package / Case
DPak, TO-252 (5 leads + tab)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
DPAK (TO-252)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGD02N120XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SGD02N120
Manufacturer:
infineon
Quantity:
647
SGP02N120
SGD02N120,
SGI02N120
PG-TO220-3-1
Power Semiconductors
9
Rev. 2.3
Sep. 07