IGD06N60T Infineon Technologies, IGD06N60T Datasheet - Page 8

• Manufacturer Part Number: IGD06N60T
• Description: IGBT 600V 12A 88W TO252-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGD06N60T

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 88W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IGD06N60TXT

Power Semiconductors
Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
80A
60A
40A
20A
15V
10V
0A
5V
0V
12V
0nC
V
10 nC
(I
current as a function of gate-
emitter voltage
(V
GE
C
CE
,
= 6 A)
14V
GATE
Q
GE
400V, T
20n C
,
-
GATE CHARGE
EMITTETR VOLTAGE
120V
16V
30nC
j
150 C)
40nC
48 0V
18V
50nC
8
TrenchStop® Series
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
10pF
1nF
10V
0V
V
CE
V
of collector-emitter voltage
(V
function of gate-emitter voltage
(V
T
,
GE
Jmax
COLLECTOR
GE
11V
CE
,
=0V, f = 1 MHz)
=600V, start at T
GATE
<150°C)
10V
-
EMITETR VOLTAGE
12V
-
EMITTER VOLTAGE
IGD06N60T
13V
J
=25°C,
20V
December 06
14V
C
C
C
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