FIO50-12BD IXYS, FIO50-12BD Datasheet - Page 3

• Manufacturer Part Number: FIO50-12BD
• Description: IC SWITCH BIDIR IGBT I4-PAC-5
• Manufacturer: IXYS

Specifications of FIO50-12BD

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 50A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS i4-Pac
• Pin Count: 5
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vrrm, (v): 1200
• Vvrms, (v): 1200
• Irms, Per Phase, (a): 50
• @ Tc, (°c): 2.6
• @ Th, (°c): 2.2
• Itsm, 10 Ms, Tvj = 45°c, (a): 0.6
• Itsm, 8.33 Ms, Tvj = 45°c, (a): 48
• Vt0, (v): 2.4
• Rt, (mohms): 150
• Rthjh, (k/w): -
• Tvjm, (°c): 1.3
• Rthjc, Max, (k/w): -
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2003 IXYS All rights reserved
I
I
V
C
C
GE
120
100
120
100
80
60
40
20
20
15
10
A
A
80
60
40
20
V
0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5
0
0
0
4
T
VJ
V
CE
= 125°C
1
= 20 V
6
40
Typ. turn on gate charge
2
8
V
GE
80
= 17 V
3
T
VJ
10
= 25°C
4
120
V
V
CE
GE
12
5
V
I
C
Q
CE
G
160
T
= 600 V
= 35 A
VJ
14
= 25°C
6
nC
15 V
13 V
11 V
9 V
V
V
200
7
16
Z
I
0.0001
C
thJC
Fig. 6
0.001
Fig. 2 Typ. output characteristics
I
Fig. 4
F
0.01
120
100
K/W
0.1
A
80
60
40
20
10
90
75
60
45
30
15
A
0.001
1
0
0
0
0
Typ. forward characteristics of
free wheeling diode
Typ. transient thermal impedance
1
T
0.01
VJ
1
= 125°C
2
single pulse
3
V
0.1
FIO 50-12BD
2
GE
= 17 V
4
V
V
F
T
CE
VJ
5
t
= 25°C
1
3
T
VJ
= 125°C
6
MUBW3512E7
V
13 V
15 V
11 V
diode
IGBT
9 V
s
V
3 - 4
10
7
4