FIO50-12BD IXYS, FIO50-12BD Datasheet
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FIO50-12BD
Specifications of FIO50-12BD
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FIO50-12BD Summary of contents
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... off MHz ies 600 Gon thJC R thJS © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
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... Conditions C coupling capacity between shorted p pins and mounting tab in the case d ,d pin - pin pin - backside metal S A Weight © 2003 IXYS All rights reserved Equivalent Circuits for Simulation Maximum Ratings Conduction Characteristic Values IGBT (typ min. typ. max. 2.4 2.8 V Diode (typ ...
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... 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 25° 600 0.0001 160 200 FIO 50-12BD 120 100 Fig. 2 Typ. output characteristics 125°C ...
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... Fig. 7 Typ. turn on energy and switching times versus collector current 600 ± 125° Fig. 9 Typ. turn on energy and switching times versus gate resistor © 2003 IXYS All rights reserved 100 off 600 ± Ω 125° Fig. 8 160 120 off ...