IRG7PH35UDPBF International Rectifier, IRG7PH35UDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG7PH35UDPBF
• Description: IGBT N-CH 1200V 50A TP-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH35UDPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 50A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 2.80
• Pd @25c (w): 180
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 2 - Maximum DC Collector Current vs.
1000
0.01
100
0.1
10
45
40
35
30
25
20
15
10
60
50
40
30
20
10
1
5
0
0
T
0.1
25
1
C
Tc = 25°C
Tj = 150°C
Single Pulse
= 25°C, T
Square Wave:
Fig. 4 - Forward SOA
Case Temperature
50
10
V
CC
J
Diode as specified
I
≤
75
V CE (V)
150°C; V
T C (°C)
DC
100
100
GE
1000
Fig. 1 - Typical Load Current vs. Frequency
=15V
125
10µsec
100µsec
1msec
1
IRG7PH35UDPbF/IRG7PH35UD-EP
10000
150
(Load Current = I
f , Frequency ( kHz )
RMS
of fundamental)
1000
200
150
100
100
50
10
10
0
1
Fig. 3- Power Dissipation vs. Case
10
0
Fig. 5 - Reverse Bias SOA
T
20
J
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
= 150°C; V
40
Temperature
100
60
V CE (V)
T C (°C)
GE
80
= 20V
1000
100 120 140 160
100
10000
3