IRG7PH35UDPBF International Rectifier, IRG7PH35UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG7PH35UDPBF
• Description: IGBT N-CH 1200V 50A TP-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH35UDPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 50A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 2.80
• Pd @25c (w): 180
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH35UDPbF/IRG7PH35UD-EP
Notes:

‚
ƒ
„
V
∆V
V
V
∆V
gfe
I
V
I
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
Erec
t
I
Electrical Characteristics @ T
Switching Characteristics @ T
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
(BR)CES
GE(th)
2
CC
θ
is measured at T
/∆TJ
= 80% (V
/∆T
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
), V
J
GE
of approximately 90°C.
= 20V, R
Parameter
Parameter
G
=
50Ω.
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
(BR)CES
safely.
Min.
Min.
1200
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
2000
Typ.
1060
1680
1750
1120
2870
1940
620
160
190
210
120
790
105
-16
1.2
1.9
2.3
2.0
2.8
2.5
—
—
22
—
85
15
35
30
15
80
30
15
40
40
Max.
Max.
1300
2150
±100
100
130
850
180
105
2.2
6.0
3.6
—
—
—
—
—
—
—
20
50
50
30
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
Units
Units
V/°C
nC
µA
nA
pF
µJ
ns
µJ
ns
µJ
ns
V
V
V
S
V
A
Energy losses include tail & diode reverse recovery
Energy losses include tail & diode reverse recovery
V
V
I
I
V
V
V
V
I
I
V
I
V
V
I
R
I
R
I
R
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
T
V
V
C
C
F
F
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
CC
CC
GE
G
G
G
G
= 20A
= 20A, T
= 20A, V
= 20A, V
= 20A
= 20A, V
= 20A, V
= 20A, V
= 20A, V
=10Ω, L=200uH, L
= 150°C
= 150°C, I
= 150°C
= 10Ω, L = 200uH, L
= 10Ω, L = 200uH, L
= 10Ω, L = 200uH, L
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
= 600V, I
= 15V, Rg = 10Ω, L =1.0mH, L
Conditions
GE
GE
, I
, I
J
C
C
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 150°C
GE
= 250µA
= 1mA (25°C-150°C)
C
F
= 600µA
= 600µA (25°C - 150°C)
= 15V, T
= 15V, T
= 20A, PW = 30µs
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= 80A
= 20A
= +20V to 0V
Conditions
S
=150nH, T
J
J
GE
S
GE
S
GE
GE
S
= 25°C
= 150°C
= 150nH, T
= 150nH, T
= 150nH
J
=15V
= 15V
= 15V
= 15V
= 150°C
J
www.irf.com
= 150°C
s
= 150nH
J
J
= 25°C
= 25°C
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