IXSH45N100 IXYS, IXSH45N100 Datasheet - Page 3

• Manufacturer Part Number: IXSH45N100
• Description: IGBT 1000V SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH45N100

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 45A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 1000
• Eoff, Typ, Tj=125°c, Igbt, (mj): 15
• Rthjc, Max, Igbt, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 2000 IXYS All rights reserved
10
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
0
Fig.1 Saturation Characteristics
0
Fig.3 Collector-Emitter Voltage
8
4
Fig.5 Input Admittance
T
J
V
= 25°C
5
CE
T
J
= 10V
9
= 25°C
vs. Gate-Emitter Voltage
6
1
T
10
7
J
T
= 125°C
V
J
= 25°C
GE
8
V
V
V
= 15V
2
11
CE
GE
GE
9 10 11 12 13 14 15
- Volts
- Volts
- Volts
12
13V
T
3
J
I
= - 40°C
I
I
C
C
C
= 22.5A
= 90A
= 45A
13
4
14
11V
9V
7V
15
5
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
IXSH 45N100
0
-50
-50
Fig.2 Output Characterstics
Fig.4 Temperature Dependence
0
Fig.6 Temperature Dependence of
V
T
BV
I
GE
V
I
C
C
J
2
-25
-25
GE(th)
= 3mA
= 4mA
= 25°C
= 15V
CES
of Output Saturation Voltage
Breakdown and Threshold Voltage
4
0
0
6
T
T
25
25
J
J
V
8
- Degrees C
- Degrees C
CE
10 12 14 16 18 20
50
50
- Volts
IXSM 45N100
75
75
V
100 125 150
100 125 150
GE
= 15V
I
I
I
C
C
C
13V
11V
= 22.5A
9V
= 90A
= 45A
3 - 4