IXSH45N100 IXYS, IXSH45N100 Datasheet
IXSH45N100
Specifications of IXSH45N100
Available stocks
Related parts for IXSH45N100
IXSH45N100 Summary of contents
Page 1
... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 45N100 IXSM 45N100 Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 180 = 2 0.8 V CES , T = 125°C 10 CES ...
Page 2
... CES 125°C 100 J 300 = 2.7 W 5.4 G 550 2200 , CES 25 G 0.25 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 45N100 IXSM 45N100 TO-247 AD (IXSH) Outline 260 200 nC Dim ...
Page 3
... Volts GE Fig.5 Input Admittance 10V 25° 125° Volts GE © 2000 IXYS All rights reserved 13V 11V 90A 45A 22. 40°C J IXSH 45N100 IXSM 45N100 Fig.2 Output Characterstics 300 T = 25°C J 250 V GE 200 150 100 Volts CE Fig.4 Temperature Dependence of Output Saturation Voltage 1 ...
Page 4
... Q - nanocoulombs g Fig.11 Transient Thermal Impedance 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXSH 45N100 Fig.8 60 2600 E off 50 2400 2200 20 2000 10 0 1800 80 100 0 Fig.10 Turn-Off Safe Operating Area ...