IXSH30N60BD1 IXYS, IXSH30N60BD1 Datasheet - Page 3

• Manufacturer Part Number: IXSH30N60BD1
• Description: IGBT 600V FRD SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH30N60BD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 55A
• Current - Collector (ic) (max): 55A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 55A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 55
• Ic90, Tc=90°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (k/w): 0.62
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
100
140
120
100
120
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
4
0
Fig.1 Saturation Characteristics
Fig.3 Collector-Emitter Voltage
Fig.5 Input Admittance
T
V
T
J
CE
J
= 125°C
= 25°C
6
= 10V
T
1
2
vs. Gate-Emitter Voltage
J
= 125°C
8
V
V
2
4
CE
GE
V
- Volts
CE
- Volts
10
T
V
J
GE
V
- Volts
= 25°C
GS
= 15V
3
6
=15V
12
4
8
14
13V
11V
13V
11V
9V
7V
7V
9V
10
16
5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
10000
1000
100
200
160
120
1.6
1.4
1.2
1.0
0.8
0.6
10
80
40
Fig.2 Output Characterstics
Fig.4 Temperature Dependence
Fig.6 Temperature Dependence of
0
25
0
0
V
T
GE
of Output Saturation Voltage
Breakdown and Threshold Voltage
J
5
= 25°C
= 15V
50
2
10
V
GE
T
J
= 15V
15
75
V
- Degrees C
4
V
CE
I
I
I
C
C
C
CE
= 60A
= 15A
= 30A
-Volts
- Volts
20
13V
100
6
25
C
C
C
oss
iss
rss
f = 1Mhz
30
125
8
11V
35
9V
7V
5V
150
3 - 5
40
10