IXSH30N60BD1 IXYS, IXSH30N60BD1 Datasheet - Page 2

• Manufacturer Part Number: IXSH30N60BD1
• Description: IGBT 600V FRD SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH30N60BD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 55A
• Current - Collector (ic) (max): 55A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 55A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 55
• Ic90, Tc=90°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (k/w): 0.62
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
Notes: 1. Switching times may increase for V
RM
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
rr
TO-268AA (IXST) (D
fs
off
on
off
F
oes
thJC
thCK
thCK
thJC
ies
res
g
ge
gc
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Inductive load, T
I
V
Note 1.
Inductive load, T
I
V
Note 1
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
V
I
Test Conditions
I
Note 2
I
V
I
C
C
C
C
F
F
F
CE
CE
CE
R
= I
= I
= I
= 50A; V
= 1 A; -di/dt = 100 A/ms; V
= I
= 100 V; -di
= 0.8 V
= 0.8 V
= 25 V, V
C90
C90
C90
= I
C90
; V
; V
, V
, V
C90
3
PAK)
GE
GE
; V
GE
GE
CES
CES
GE
= 15 V
= 15 V
= 15 V, V
= 0 V
CE
GE
= 0 V; T
; R
; R
F
= 10 V,
/dt = 100 A/ms
= 0 V, f = 1 MHz
G
G
J
J
= 4.7 W
= 4.7 W
= 25°C
= 125°C
J
CE
= 100 °C
= 0.5 V
CE
R
(Clamp) > 0.8 • V
T
T
= 30 V T
J
J
(T
(T
CES
= 150 °C
= 25 °C
J
J
Dim.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2
1
2
1
TO-247
TO-264
13.80 14.00
15.85 16.05
18.70 19.10
J
1.15
13.3
2.40
1.20
1.00
3.80
Min.
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
5.45 BSC
Millimeter
4.9
2.7
.02
1.9
= 25°C
0.25 BSC
.4
4,881,106
4,931,844
CES
min.
min.
Max.
1.45
13.6
2.70
1.40
1.15
4.10
, higher T
10
5.1
2.9
.25
2.1
.65
Characteristic Values
Characteristic Values
3100
typ.
0.25
0.15
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
typ.
Min. Max.
240
100
150
140
270
250
.75
1.5
0.5
2.5
35
5,017,508
5,034,796
Inches
.215 BSC
.010 BSC
30
30
38
30
30
30
35
J
2
or increased R
.057
.551
.632
.535
.752
.106
.055
.045
.161
.201
.114
.010
.026
max.
max.
.83
0.62 K/W
270
270
1.7
2.5
2.5
.09 K/W
2.5 mJ
50
5,049,961
5,063,307
K/W
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
G
.
5,187,117
5,237,481
TO-247 AD (IXSH) Outline
Min. Recommended Footprint
TO-264 AA (IXSK) Outline
Dim. Millimeter
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
5,486,715
5,381,025
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
25.91
19.81
20.32
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
5.46 BSC
-
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Min.
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
Inches
.215 BSC
Inches
0.177
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
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