IRG7PH35UD1PBF International Rectifier, IRG7PH35UD1PBF Datasheet - Page 4

• Manufacturer Part Number: IRG7PH35UD1PBF
• Description: IGBT N-CH 1200V 50A TO-247
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD1PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 50A
• Power - Max: 179W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.9V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 1.15
• Pd @25c (w): 179
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH35UD1PbF/IRG7PH35UD1-EP
4
Fig. 7 - Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
0
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
0
4
5
Fig. 11 - Typical V
Fig. 9 - Typical V
T
J
= 150°C; tp = 30µs
2
8
T
T
J
J
10
= 150°C
= -40°C
4
V CE (V)
V GE (V)
V GE (V)
12
CE
CE
I CE = 10A
I CE = 20A
I CE = 40A
I CE = 10A
I CE = 20A
I CE = 40A
vs. V
6
vs. V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
15
GE
16
GE
8
10
20
20
Fig. 12 - Typ. Transfer Characteristics
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
Fig. 8 - Typ. Diode Forward Voltage Drop
0
8
7
6
5
4
3
2
1
0
0.0
5
4
Fig. 10 - Typical V
V
V GE, Gate-to-Emitter Voltage (V)
5
CE
150°C
25°C
0.5
= 50V; tp = 30µs
T J = 150°C
Characteristics
T
10
6
J
= 25°C
V GE (V)
V F (V)
1.0
7
I CE = 10A
I CE = 20A
I CE = 40A
CE
T J = 25°C
vs. V
15
8
1.5
GE
9
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2.0
20
10