STGW30NC60KD STMicroelectronics, STGW30NC60KD Datasheet - Page 8

• Manufacturer Part Number: STGW30NC60KD
• Description: IGBT N-CH 30A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7485-5; STGW30NC60KD

Electrical characteristics
8/14
Figure 8.
Figure 10. Normalized breakdown voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
V
(norm.)
(norm.)
(BR)CES
V
1,10
1.05
1.00
0.95
0.90
GE(th)
1,15
1.05
0.95
0.85
0.75
-75
-75
Normalized gate threshold voltage
vs temperature
temperature
I
C
-25
-25
= 1 mA
25
25
75
75
I
C
= 250 µA
125
125
T
T
C
C
(°C)
(°C)
175
175
Figure 9.
Figure 11. Switching losses vs temperature
Collector-emitter on voltage vs
collector current
current
STGW30NC60KD