IXDH35N60BD1 IXYS, IXDH35N60BD1 Datasheet - Page 4

• Manufacturer Part Number: IXDH35N60BD1
• Description: IGBT NPT 600V 60A TO-247AD
• Manufacturer: IXYS

Specifications of IXDH35N60BD1

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 35A
• Current - Collector (ic) (max): 60A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.8
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tc=90°c, Diode, (a): 25
• Rthjc, Max, Diode, (k/w): 1.6
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
E
E
I
CM
on
on
120
100
2.0
1.5
1.0
0.5
0.0
mJ
mJ
80
60
40
20
A
4
3
2
1
0
0
10
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
R
T
R
T
CE
GE
J
G
J
G
= 125°C
= 125°C
100
= 300V
= 10
= ±15V
5
= 10
20
W
times versus collector current
times versus gate resistor
W
RBSOA
10
200
30
15
300
20
40
400
25
R
t
d(on)
E
I
G
t
C
r
500
on
50
30
V
V
I
T
C
J
CE
GE
V
CE
= 125°C
600
= 35A
= 300V
= ±15V
35
60
t
E
t
d(on)
r
W
on
A
700
40
80
60
40
20
0
60
45
30
15
0
ns
ns
V
t
t
Z
E
E
thJC
IXDP 35N60 B
off
off
0.001
0.01
K/W
2.0
mJ
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
0.1
mJ
1
10
10
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
-5
V
V
I
T
C
J
CE
GE
= 125°C
= 35A
= 300V
= ±15V
5
10
20
-4
single pulse
times versus collector current
times versus gate resistor
10
10
30
-3
15
10
20
IXDH 35N60 B
IXDH 35N60 BD1
-2
40
t
E
d(off)
t
off
f
25
R
10
G
I
-1
C
50
t
30
V
V
R
T
CE
GE
J
G
10
= 125°C
= 300V
= 10
= ±15V
35
0
60
IXDH30N60B
t
E
t
diode
IGBT
d(off)
W
f
s
W
off
A
10
40
400
300
200
100
0
1
800
ns
600
400
200
0
ns
4 - 4
t
t