IXDH35N60BD1 IXYS, IXDH35N60BD1 Datasheet
IXDH35N60BD1
Manufacturer Part Number
IXDH35N60BD1
Description
IGBT NPT 600V 60A TO-247AD
Manufacturer
IXYS
Datasheet
1.IXDP35N60B.pdf
(4 pages)
Specifications of IXDH35N60BD1
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 35A
Current - Collector (ic) (max)
60A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
35
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Rthjc, Max, Igbt, (°c/w)
0.50
If, Tc=90°c, Diode, (a)
25
Rthjc, Max, Diode, (k/w)
1.6
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXDH35N60BD1
Manufacturer:
IXYS
Quantity:
2 100
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
Symbol
V
V
I
I
V
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
RBSOA
t
(SCSOA)
P
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
CES
GES
C25
C90
CM
SC
GE(th)
CE(sat)
J
stg
(BR)CES
CES
CGR
GES
GEM
C
d
Conditions
V
I
V
V
I
Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 µH
V
R
T
Mounting torque
C
C
GE
CE
CE
J
J
C
C
C
GE
GE
C
G
= 10 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 90°C, t
= ±15 V, T
= ±15 V, V
= 25°C
= 0 V
= 0.7 mA, V
= V
= 0 V, V
= 35 A, V
CES
p
GE
GE
=1 ms
J
CE
= ± 20 V
= 125°C, R
= 15 V
CE
= 600 V, T
= V
IGBT
Diode
TO-220
TO-247
GE
GE
= 20 kW
G
J
= 10 W
T
T
= 125°C
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
G
IXDH 35N60 B
IXDP 35N60 B
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
min.
600
Characteristic Values
E
C
3
-55 ... +150
-40 ... +150
V
CEK
Maximum Ratings
I
CM
0.4 - 0.6
0.8 - 1.2
typ.
2.2
1
< V
= 110
IXDH 35N60 BD1
600
600
±20
±30
250
300
G
CES
60
35
70
10
80
6
max.
± 500 nA
0.1 mA
2.7
5
E
C
mA
Nm
Nm
µs
°C
°C
°C
W
W
V
V
V
V
V
V
V
A
A
A
A
g
TO-247 AD
TO-220 AB
G = Gate,
C = Collector ,
Features
Advantages
Typical Applications
V
I
V
C25
NPT IGBT technology
low switching losses
low tail current
no latch up
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
High power density
G
CES
CE(sat) typ
C
E
G
C
E
= 600 V
= 60 A
= 2.1 V
IXDH ...
IXDP ...
E = Emitter
TAB = Collector
C (TAB)
C (TAB)
1 - 4
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IXDH35N60BD1 Summary of contents
Page 1
... V (BR)CES 0.7 mA GE(th CES CE CES ± GES CE(sat © 2002 IXYS All rights reserved IXDP 35N60 B IXDH 35N60 B IXDH 35N60 BD1 IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Maximum Ratings 600 = 20 kW 600 GE ±20 ± 110 < V CEK CES = 125°C ...
Page 2
... -di /dt = 400 A/µ 125° -di /dt = 100 A/µ thJC © 2002 IXYS All rights reserved IXDP 35N60 B Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 1600 150 90 = 480 V 120 125°C J 320 70 1.6 0.8 0.25 0.5 Characteristic Values (T = 25° ...
Page 3
... Fig. 1 Typ. output characteristics 125° 25° Fig. 3 Typ. transfer characteristics Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved IXDP 35N60 25° 20V 480V 30A C 100 120 IXDH 35N60 B IXDH 35N60 BD1 80 11V V = 17V 15V 13V ...
Page 4
... E on 1.0 0.5 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved IXDP 35N60 d(on off d(on off 300V ...