IXGH32N60B IXYS, IXGH32N60B Datasheet - Page 3

IGBT HIPERFAST 600V 60A TO-247AD

IXGH32N60B

Manufacturer Part Number
IXGH32N60B
Description
IGBT HIPERFAST 600V 60A TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheets

Specifications of IXGH32N60B

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 32A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
64
Ic90, Tc=90°c, Igbt, (a)
32
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
85
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH32N60B
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXGH32N60BD1
Manufacturer:
APT
Quantity:
2 000
Part Number:
IXGH32N60BU1
Manufacturer:
FUJI
Quantity:
6 000
© 2003 IXYS All rights reserved
100
100
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
Fig. 3. Saturation Voltage Characteristics
0
0
3
Fig. 5. Admittance Curves
Fig. 1. Saturation Voltage Characteristics
V
T
CE
T
J
J
= 125°C
1
1
= 10V
4
= 25°C
T
J
= 125°C
2
2
5
V
V
3
CE
3
GE
6
V
T
- Volts
CE
- Volts
J
= 25°C
- Volts
4
4
7
5
5
8
V
GE
= 15V
6
6
13V
11V
9
9V
7V
5V
7
10
7
G32N60B P1
Fig. 6. Temperature Dependence of BV
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B
1.75
1.50
1.25
1.00
0.75
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
200
160
120
80
40
0
25
-50 -25
0
Fig. 2. Extended Output Characteristics
Fig. 4. Temperature Dependence of V
V
T
GE
BV
I
C
J
= 25°C
= 250µA
= 15V
CES
50
2
V
I
C
0
GE(th)
= 250µA
T
T
V
J
25
GE
75
J
V
- Degrees C
4
- Degrees C
= 15V
CE
50
- Volts
IXGT 32N60BD1
100
6
75 100 125 150
I
I
I
C
C
C
= 64A
= 16A
= 32A
13V
125
8
11V
5V
9V
7V
DSS
& V
CE(sat)
150
10
GE(th)

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