IXGH32N60B IXYS, IXGH32N60B Datasheet
IXGH32N60B
Manufacturer Part Number
IXGH32N60B
Description
IGBT HIPERFAST 600V 60A TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Specifications of IXGH32N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 32A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
64
Ic90, Tc=90°c, Igbt, (a)
32
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
85
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH32N60B
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH32N60BD1
Manufacturer:
APT
Quantity:
2 000
Company:
Part Number:
IXGH32N60BU1
Manufacturer:
FUJI
Quantity:
6 000
© 2000 IXYS All rights reserved
HiPerFAST
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
TM
, V
GE
VJ
GE
CES
IGBT
= 125°C, R
= 15 V
= ±20 V
GE
CE
= V
= 0 V
GE
GE
= 1 MW
G
= 33 W
T
T
J
J
(T
= 125°C
= 25°C
J
= 25°C, unless otherwise specified)
IXGH32N60B
TO-247 AD
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
= 64
600
600
±20
±30
120
200
150
300
60
32
CES
max.
±100
6
200
2.5
5
1
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
TO-247 AD
G = Gate,
E = Emitter,
Features
• International standard package
• High current handling capability
• Newest generation HDMOS
• MOS Gate turn-on
Applications
• PFC circuits
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
Advantages
• High power density
• Very fast switching speeds for high
V
I
V
t
C25
fi
JEDEC TO-247 AD
- drive simplicity
power supplies
frequency applications
CES
CE(sat)
G
C
E
= 600 V
= 60 A
= 2.5 V
= 80 ns
C = Collector,
TAB = Collector
95566B (7/00)
C (TAB)
TM
process
1 - 2
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IXGH32N60B Summary of contents
Page 1
... CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH32N60B Maximum Ratings 600 = 1 MW 600 GE ±20 ± 120 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. TO-247 AD ...
Page 2
... 4.7 W 0.3 off 120 , 120 CES 1.4 G 0.25 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH32N60B TO-247 AD (IXGH) Outline 150 Dim. Millimeter Min. Max 19.81 20.32 0.780 0.800 200 ns B 20.80 21.46 0.819 0.845 ...