IXST15N120BD1 IXYS, IXST15N120BD1 Datasheet - Page 2

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IXST15N120BD1

Manufacturer Part Number
IXST15N120BD1
Description
IGBT 1200V 30A FRD SCSOA TO-268
Manufacturer
IXYS
Datasheet

Specifications of IXST15N120BD1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
30
Ic90, Tc=90°c, Igbt, (a)
15
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.4
Tfi, Typ, Igbt, (ns)
150
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (k/w)
0.83
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXST15N120BD1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
Reverse Diode (FRED)
Symbol
V
I
t
R
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to
RM
d(on)
d(on)
ri
d(off)
fi
ri
d(off)
fi
rr
fs
F
off
on
off
thJC
ies
oes
res
thJC
thCK
g
ge
gc
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for V
avoid thermal runaway.
Test Conditions
I
Note 2
I
V
I
Test Conditions
I
Note 2
V
I
(TO-247)
Inductive load, T
I
R
V
Note 3
Inductive load, T
I
R
Note 3
C
C
F
F
F
C
C
CE
R
CE
G
G
= I
= 30A; V
= 1 A; -di/dt = 200 A/ms; V
= 100 V; -di
= I
= 10 W
= 0.8 V
= I
= I
= I
= 10 W, V
= 25 V, V
C90
C90
C90
C90
C90
, V
, V
, V
, V
; V
GE
GE
CES
GE
CE
GE
GE
= 0 V
= 0 V; T
CE
GE
= 15 V, V
F
= 10 V,
= 15 V
= 15 V
/dt = 100 A/ms
= 0.8 V
= 0 V, f = 1 MHz
J
J
= 25°C
= 125°C
J
= 100°C
CES
CE
= 0.5 V
CE
R
T
T
(Clamp) > 0.8 • V
= 30 V T
J
J
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
(T
Min. Recommended Footprint
= 150
= 25
J
CES
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
O
C
O
C
J
4,881,106
4,931,844
= 25°C
min.
CES
min.
, higher T
Characteristic Values
Characteristic Values
7
5,017,508
5,034,796
typ.
1400
typ.
0.25
5.5
120
148
126
265
298
30
9.5
1.5
2.6
3.1
37
57
14
25
30
25
30
25
J
orincreased R
max.
max.
0.83 K/W
5,049,961
5,063,307
300
250
1.7
2.5
0.9 K/W
2.9 mJ
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
S
G
.
5,187,117
5,237,481
TO-247 AD (IXSH) Outline
TO-268AA (D
Dim. Millimeter
Dim.
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
2
1
2
1
IXSH 15N120BD1
IXST 15N120BD1
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
13.80 14.00
15.85 16.05
18.70 19.10
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
4.9
2.7
.02
1.9
5.45 BSC
0.25 BSC
.4
-
3
PAK)
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Max.
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
Min.
Inches
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min. Max.
.75
Inches
.215 BSC
.010 BSC
0.177
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83
2 - 2

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