IXST15N120BD1 IXYS, IXST15N120BD1 Datasheet
IXST15N120BD1
Manufacturer Part Number
IXST15N120BD1
Description
IGBT 1200V 30A FRD SCSOA TO-268
Manufacturer
IXYS
Datasheet
1.IXSH15N120BD1.pdf
(2 pages)
Specifications of IXST15N120BD1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
30
Ic90, Tc=90°c, Igbt, (a)
15
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.4
Tfi, Typ, Igbt, (ns)
150
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (k/w)
0.83
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXST15N120BD1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
HIGH Voltage IGBT
with Diode
"S" Series - Improved SCSOA Capability
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268)
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Non repetitive
T
Mounting torque
Test Conditions
I
I
V
Note 1
V
I
Note 2
C
C
C
C
C
C
C
J
J
J
GE
CE
CE
= I
= 125°C, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 1.0 mA, V
= 250 mA, V
= 0.8 • V
= 0 V, V
C90,
V
GE
= 15 V
GE
J
CES
GE
= 125°C, R
= ±20 V
= 720 V; V
GE
CE
= 0 V
= V
TO-247
TO-268
GE
GE
G
= 1 MW
= 10 W
GE
(TO-247)
T
T
= 15 V, R
J
J
(T
= 125°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSH 15N120BD1
IXST 15N120BD1
G
= 10 W
1200
min.
Characteristic Values
3
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
3.0
2.8
CM
1200
1200
= 40
±20
±30
150
150
300
260
CES
10
30
15
60
6
4
max.
±100
2.5
3.4
50
6
mA
mA
nA
°C
°C
°C
°C
°C
ms
W
V
V
V
V
V
V
A
A
A
A
V
V
g
g
I
V
V
Features
• High Blocking Voltage
• Epitaxial Silicon drift region
• MOS gate turn-on for drive simplicity
• Molding epoxies meet UL 94 V-0
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• DC choppers
TO-247 AD (IXSH)
TO-268 ( IXST)
C25
flammability classification
- fast switching
- small tail current
- low switching losses
power supplies
CES
CE(sat)
G
C
=
= 1200 V
=
G
E
E
30 A
3.4 V
98708A (7/00)
(TAB)
(TAB)
1 - 2
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IXST15N120BD1 Summary of contents
Page 1
... GE(th 0.8 • V CES CE CES Note 1 = ± GES CE(sat) C C90, GE Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 15N120BD1 IXST 15N120BD1 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 0.8 V CES = 150 -55 ...
Page 2
... 100°C 5 25° (Clamp) > 0.8 • higher T orincreased R CE CES J Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 15N120BD1 IXST 15N120BD1 TO-247 AD (IXSH) Outline Dim. Millimeter Min ...