STGW30NC60VD STMicroelectronics, STGW30NC60VD Datasheet - Page 7

• Manufacturer Part Number: STGW30NC60VD
• Description: IGBT N-CH FAST 80A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Very Fastr

Specifications of STGW30NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Capacitance, Gate: 2200 pF
• Current, Collector: 80 A
• Energy Rating: 550 μJ
• Package Type: TO-247
• Polarity: N-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.48 °C/W
• Speed, Switching: 50 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-5969-5

STGW30NC60VD
Figure 8.
Figure 10. Capacitance variations
Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs collector
Normalized breakdown voltage vs
temperature
Doc ID 13241 Rev 5
Figure 9.
Figure 11. Switching losses vs temperature
Gate charge vs. gate-emitter voltage
current
Electrical characteristics
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