IXEH25N120 IXYS, IXEH25N120 Datasheet - Page 4

• Manufacturer Part Number: IXEH25N120
• Description: IGBT NPT3 SGL 1200V 36A TO-247AD
• Manufacturer: IXYS

Specifications of IXEH25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 36A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

E
© 2005 IXYS All rights reserved
E
I
CM
on
on
mJ
20
16
12
10
mJ
80
60
40
20
A
8
4
0
8
6
4
2
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy vs gate resistor
Fig. 11 Reverse biased safe operating area
E
V
V
R
T
on
VJ
CE
GE
200
G
= 600 V
= 68 Ω
= ±15 V
= 125°C
50
times versus collector current
RBSOA
10
400
R
T
VJ
G
100
= 68 Ω
= 125°C
600
20
V
V
I
T
C
VJ
CE
GE
800 1000 1200
= 600 V
= ±15 V
= 20 A
= 125°C
150
R
I
G
C
30
200
V
t
r
CE
A
t
Ω
d(on)
250
40
V
250
200
150
100
50
0
ns
t
E
Z
E
thJC
off
off
K/W
mJ
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
mJ
2.0
1.5
1.0
0.5
0.0
0.1
10
1
0
0
1
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
R
T
E
VJ
CE
GE
G
off
= 600 V
= 68 Ω
= ±15 V
= 125°C
E
50
off
times versus collector current
times versus gate resistor
10
10
V
V
I
T
C
VJ
CE
GE
= 600 V
= ±15 V
= 20 A
= 125°C
100
100
20
single pulse
IXEH 25N120
IXEH 25N120D1
150
R
G
I
C
1000
t
30
200
t
d(off)
ms
A
IXEH 25N120
diode
IGBT
t
Ω
d(off)
t
f
10000
t
f
250
40
400
350
300
250
200
150
100
50
0
ns
1250
1000
750
500
250
0
ns
4 - 4
t
t