IXEH25N120 IXYS, IXEH25N120 Datasheet - Page 2

• Manufacturer Part Number: IXEH25N120
• Description: IGBT NPT3 SGL 1200V 36A TO-247AD
• Manufacturer: IXYS

Specifications of IXEH25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 36A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
I
Symbol
V
I
t
R
Symbol
T
T
M
Symbol
R
Weight
© 2005 IXYS All rights reserved
Component
Diode [D1 version
F25
F90
RM
rr
TO-247 AD Outline
VJ
stg
F
thJC
thCH
d
Conditions
T
T
Conditions
I
I
V
Conditions
mounting torque
Conditions
with heatsink compound
F
F
C
C
R
= 25 A; T
= 15 A; di
= 25°C
= 90°C
= 600 V; V
only]
T
F
VJ
VJ
/dt = -400 A/µs; T
GE
= 25°C
= 125°C
= 0 V
VJ
= 125°C
min.
min.
Characteristic Values
Characteristic Values
-55...+150
-55...+150
Maximum Ratings
Maximum Ratings
0.8...1.2
0.25
130
typ.
typ.
2.7
2.1
16
6
31
19
max.
max.
3.2
1.6 K/W
Nm
K/W
°C
°C
ns
A
A
V
V
A
g
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
Equivalent Circuits for Simulation
Dim.
C
C
C
C
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
th1
th2
th1
th2
= 0.004 J/K; R
= 0.133 J/K; R
= 0.004 J/K; R
= 0.078 J/K; R
V
20.80
15.75
19.81
V
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
0
Min.
0
4.7
2.2
2.2
1.0
Millimeter
= 1.09 V; R
IXEH 25N120
IXEH 25N120D1
.4
= 1.3 V; R
GE
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
= 15 V; T
5.3
2.6
1.4
.8
0
th1
th2
th1
th2
0
0.205 0.225
0.232 0.252
= 32 m Ω
= 85 m Ω
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
= 0.335 K/W
= 0.295 K/W
= 1.076 K/W
= 0.524 K/W
242 BSC
Inches
J
= 125°C)
Max.
J
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
= 125°C)
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