IRGP30B120KD-EP International Rectifier, IRGP30B120KD-EP Datasheet - Page 6

IGBT W/DIODE 1200V 60A TO247AD

IRGP30B120KD-EP

Manufacturer Part Number
IRGP30B120KD-EP
Description
IGBT W/DIODE 1200V 60A TO247AD
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRGP30B120KD-EP

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 60A
Current - Collector (ic) (max)
60A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
2200 pF
Current, Collector
60 A
Energy Rating
2559 μJ
Polarity
N-Channel
Power Dissipation
300 W
Resistance, Thermal, Junction To Case
0.42 °C/W
Speed, Switching
5 to 40 kHz
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.43 V
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
300W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGP30B120KD-EP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGP30B120KD-EP
Manufacturer:
SEMTECH
Quantity:
9 279
Company:
Part Number:
IRGP30B120KD-EP
Quantity:
9 000
IRGP30B120KD-EP
6
3500
3300
3100
2900
2700
2500
2300
2100
1900
1700
1500
8000
7000
6000
5000
4000
3000
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Fig.15 - Typical Energy Loss vs Rg
Fig.13 - Typical Energy Loss vs Ic
Tj=125°C; L=200µH; V
0
Tj=125°C; L=200µH; V
0
0
5 10 15 20 25 30 35 40 45 50 55
I
CE
Rg=22 Ω ; V
10
=25A; V
20
Rg (ohms)
GE
I
C
GE
30
=15V
(A)
=15V
CE
CE
=600V;
40
=600V;
Eoff
Eon
50
Eon
Eoff
60
1000
100
1000
100
10
10
Fig.16 - Typical Switching Time vs Rg
Fig.14 - Typical Switching Time vs Ic
0
Tj=125°C; L=200µH; V
Tj=125°C; L=200µH; V
0
5 10 15 20 25 30 35 40 45 50 55
10
I
Rg=22 Ω ;V
CE
=25A; V
20
Rg (ohms)
I
C
GE
30
GE
(A)
=15V
=15V
CE
CE
=600V;
40
=600V;
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tdon
tdon
50
tdoff
tdoff
tr
tf
tr
tf
60

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