IRGP30B120KD-EP International Rectifier, IRGP30B120KD-EP Datasheet - Page 3

• Manufacturer Part Number: IRGP30B120KD-EP
• Description: IGBT W/DIODE 1200V 60A TO247AD
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRGP30B120KD-EP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Capacitance, Gate: 2200 pF
• Current, Collector: 60 A
• Energy Rating: 2559 μJ
• Polarity: N-Channel
• Power Dissipation: 300 W
• Resistance, Thermal, Junction To Case: 0.42 °C/W
• Speed, Switching: 5 to 40 kHz
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.43 V
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGP30B120KD-EP

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1000
100
0.1
10
70
60
50
40
30
20
10
1
0
1
0
Fig.1 - Maximum DC Collector
Current vs. Case Temperature
T
Fig.3 - Forward SOA
C
10
=25°C; Tj < 150°C
40
V
T
CE
100
C
80
(V)
(°C)
DC
PULSED
1000
120
100µ s
10ms
2µs
10µ s
1ms
10000
160
1000
320
280
240
200
160
120
100
80
40
10
IRGP30B120KD-EP
0
Fig.2 - Power Dissipation vs. Case
1
0
1
Fig.4 - Reverse Bias SOA
Tj = 150°C, V
40
Temperature
10
T
V
C
CE
100
80
(°C)
GE
(V)
= 15V
1000
120
10000
160
3