IXDA20N120AS IXYS, IXDA20N120AS Datasheet - Page 4

• Manufacturer Part Number: IXDA20N120AS
• Description: IGBT 1200V 34A TO-263AB
• Manufacturer: IXYS

Specifications of IXDA20N120AS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 34A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 38A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 38
• Ic90, Tc=90°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.4
• Rthjc, Max, Igbt, (°c/w): 0.63
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
E
E
I
CM
on
on
mJ
12
mJ
40
35
30
25
20
15
10
A
7
6
5
4
3
2
1
0
8
4
0
5
0
0
0
0
Fig. 5 Typ. turn on energy and switching
Fig. 7 Typ. turn on energy and switching
Fig. 9 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 20A
= 600V
= ±15V
200
50
E
t
t
d(on)
r
on
times versus collector current
times versus gate resistor
RBSOA
10
100
400
R
T
V
J
CEK
G
150
600
= 125°C
= 68
< V
20
W
CES
200
800 1000 1200
R
I
G
C
250
30
V
V
R
T
V
CE
GE
J
G
300
CE
= 125°C
= 600V
= 68
= ±15V
A
t
W
d(on)
W
V
E
t
r
350
on
40
140
120
100
80
60
40
20
0
240
ns
160
80
0
ns
t
t
Z
E
0.0001
thJC
off
0.001
E
0.01
K/W
off
0.1
mJ
0.00001 0.0001
mJ
10
5
4
3
2
1
0
4
3
2
1
0
1
0
0
Fig. 6 Typ. turn off energy and switching
Fig. 8 Typ. turn off energy and switching
Fig. 10 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 20A
= 600V
= ±15V
50
times versus collector current
times versus gate resistor
single pulse
10
diode
100
0.001
150
IXDA 20N120 AS
20
200
IGBT
0.01
R
G
250
I
C
t
30
V
V
R
T
E
0.1
J
CE
GE
G
off
IXDH20N120AU1
300
= 125°C
= 68
= 600V
= ±15V
A
t
E
t
t
d(off)
d(off)
f
W
s
off
W
t
f
350
40
1
500
400
300
200
100
0
ns
1600
1200
800
400
0
ns
4 - 4
t
t