IXGT50N90B2 IXYS, IXGT50N90B2 Datasheet - Page 5

• Manufacturer Part Number: IXGT50N90B2
• Description: IGBT 900V 75A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT50N90B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 900
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 200
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8.7
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
100
0.01
10
600
550
500
450
400
350
300
250
200
150
0.1
1
0
0.1
25
Sw itching Tim e on Tem perature
t
t
R
V
V
f = 1 MHz
d(off)
fi
Fig. 13. Dependence of Turn-off
35
G
GE
CE
5
- - - - - -
=
=
=
Fig. 15. Capacitance
5 Ω
45
720V
1 5V
10
T
J
55
- Degrees Centigrade
15
V
65
C E
I
C
= 25A
100A
20
- Volts
50A
75
85
25
Fig. 17. Maxim um Transient Therm al Resistance
1
I
95
C
30
= 100A
C
C
res
105 115 125
50A
25A
C
oes
ies
35
Pulse Width - milliseconds
40
10
13.5
10.5
110
100
7.5
4.5
1.5
90
80
70
60
50
40
30
20
10
15
12
0
9
6
3
0
100
0
V
I
I
C
G
CE
T
R
dV/dT < 10V/ns
200
= 50A
= 1 0mA
J
20
Fig. 16. Reverse-Bias Safe
G
= 125
= 450V
= 10Ω
Fig. 14. Gate Charge
300
º
Operating Area
40
C
Q
G
400
- nanoCoulombs
V
100
60
C E
500
- Volts
IXGH 50N90B2
IXGT 50N90B2
80
600
100
700
120
800
1000
140
900